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Ballistic hot-electron transport in nanoscale semiconductor heterostructures: Exact self-energy of a three-dimensional periodic tight-binding Hamiltonian
 

Summary: Ballistic hot-electron transport in nanoscale semiconductor heterostructures: Exact self-energy
of a three-dimensional periodic tight-binding Hamiltonian
Ian Appelbaum*
Gordon McKay Laboratory, Harvard University, Cambridge, Massachusetts 02138, USA
and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Tairan Wang and J. D. Joannopoulos
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
V. Narayanamurti
Division of Engineering and Applied Sciences and Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
Received 1 December 2003; published 2 April 2004
As the length scale for semiconductor heterostructures approaches the regime of the lattice constant, our
current theory for calculating ballistic hot-electron transport becomes inapplicable. In this case, a method such
as the Green's function formalism should be used to calculate ballistic electron transmission functions from the
exact, periodic lattice potential. We present a method for directly calculating the exact surface Green's function
for three-dimensional periodic leads which is necessary for such a scheme. Except in cases of high crystal
symmetry, the method is limited by the difficulty to solve a nonsymmetric matrix Riccati equation.
DOI: 10.1103/PhysRevB.69.165301 PACS number s : 73.23. b, 72.10.Bg
I. INTRODUCTION
Ballistic hot-electron transport in semiconductor hetero-
structures has been the subject of much research for decades.

  

Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park

 

Collections: Engineering; Materials Science