Summary: Dielectric function and critical points of the band structure for hexagonal
and cubic GaN and AlN
R. Goldhahn1
, C. Buchheim2
, V. Lebedev2
, V. Cimalla2
, O. Ambacher2
, C. Cobet3
, M. Rakel3
,
N. Esser3
, U. Rossow4
, D. Fuhrmann4
, A. Hangleiter4
, S. Potthast5
, and D.J. As5
1
Inst. f. Physik, 2
Zentrum f. Mikro- und Nanotechnologien, TU Ilmenau, PF 100565, 98684 Ilmenau, Germany
3

Source: As, Donat Josef - Department Physik, Universität Paderborn

Collections: Materials Science; Physics