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High-field hole transport in silicon nanowires A. Verma,1,a
 

Summary: High-field hole transport in silicon nanowires
A. Verma,1,a
A. K. Buin,2
and M. P. Anantram3
1
Department of Electrical Engineering and Computer Science, Texas A&M University-Kingsville, Kingsville,
Texas 78363, USA
2
Département de Chimie, Université de Montréal, Montréal, Québec, H3T 1J4 Canada
3
Department of Electrical Engineering, University of Washington, Seattle, Washington 98195, USA
Received 19 May 2009; accepted 22 October 2009; published online 10 December 2009
We report on ensemble Monte Carlo hole transport simulations for small diameter silicon nanowires.
The basis for the simulations is provided by band structure calculations using sp3
d5
s tight-binding
scheme. Principal scattering mechanisms considered are hole-bulk acoustic and optical phonon
interactions. Both steady-state and transient hole transport characteristics are explored. For the
silicon nanowires considered, the steady-state average hole drift velocity saturates due to optical
phonon scattering. Acoustic and intersubband scattering mechanisms strongly prevent an oscillation

  

Source: Anantram, M. P. - Department of Electrical Engineering, University of Washington at Seattle

 

Collections: Materials Science; Computer Technologies and Information Sciences