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A High-Q In-Plane SOI Tuning Fork Gyroscope Ajit Sharma, Faisal M. Zaman, Babak V. Amini and Farrokh Ayazi
 

Summary: A High-Q In-Plane SOI Tuning Fork Gyroscope
Ajit Sharma, Faisal M. Zaman, Babak V. Amini and Farrokh Ayazi
Integrated MEMS Laboratory
Georgia Institute of Technology
Atlanta, Georgia 30332, USA.
asharma@ece.gatech.edu
Abstract
This paper presents the design and implementation of an
in-plane solid-mass single-crystal silicon tuning fork gyro that
has the potential of attaining sub-deg/hr rate resolutions. A
design is devised to achieve high Q in the drive and sense
resonant modes (Qdrive=81,000 and Qsense=64,000) with effective
mode decoupling. The gyroscope was fabricated on 40m thick
Silicon-on-Insulator (SOI) using a simple two-mask process. The
drive and sense resonant modes were balanced electrostatically
to within 0.07% of each other and the measured rate results
show a sensitivity of 1.25mV//s in a bandwidth of 12Hz.
Keywords
Tuning Fork, Gyroscope, High-Q, Silicon-on-Insulator
INTRODUCTION AND MOTIVATION

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering