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KINETIC MODELING OF DOPANT AND IMPURITY SURFACE SEGREGATION DURING VAPOR PHASE GROWTH: MULTIPLE MECHANISM APPROACH
 

Summary: KINETIC MODELING OF DOPANT AND IMPURITY SURFACE SEGREGATION
DURING VAPOR PHASE GROWTH: MULTIPLE MECHANISM APPROACH
Craig B. Arnold1
and Michael J. Aziz2
1
Materials Science and Technology Division
Naval Research Laboratory, Washington, DC 20375, USA
2
Division of Engineering and Applied Sciences,
Harvard University, Cambridge, MA 02138, USA
ABSTRACT
We propose a new kinetic model for surface segregation during vapor phase growth that
accounts for multiple segregation mechanisms, including mechanisms for terrace mediated
exchange and step edge mediated exchange. The major result of the model is an analytic
expression for the experimentally measured segregation length and profile broadening that can be
readily calculated without the need for numerical simulations. We compare the model to
experimental measurements for the temperature dependence of segregation of Sb in Si(001). The
model is able to accurately describe both the anomalous segregation at low temperature and the
transition between equilibrium and kinetically limited segregation at high temperature. An
excellent agreement is obtained using realistic energies and pre-exponential factors for the kinetic

  

Source: Arnold, Craig B. - Department of Mechanical and Aerospace Engineering, Princeton University
Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Engineering; Materials Science; Physics