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Time-resolved measurements of stress effects on solid-phase epitaxy of intrinsic and doped Si
 

Summary: Time-resolved measurements of stress effects on solid-phase epitaxy
of intrinsic and doped Si
W. Barvosa-Cartera)
and M. J. Azizb)
Division of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138
Received 26 March 2001; accepted for publication 25 May 2001
The effect of externally applied in-phase stresses on the solid-phase epitaxial growth rate of both
intrinsic and B-doped Si has been measured using time-resolved reflectivity. The data are described
phenomenologically by a product of a function of concentration, an Arrhenius function of
temperature, and a Boltzmann factor in the product of the stress and the activation strain V*, with
V11* ( 0.14 0.04) and ( 0.17 0.02) times the atomic volume, in intrinsic and B-doped
material, respectively. 2001 American Institute of Physics. DOI: 10.1063/1.1386399
The understanding of how stress affects the kinetics of
condensed-phase processes has been an active topic of re-
search for several decades. This topic has become especially
important recently, however, with the increasing use of
strained epitaxial thin films in microelectronics, and the ad-
vent of recent research on highly strained systems such as
quantum dots.1
The kinetic processes at play in all of these

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science