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Summary: Self Adaptive Body Biasing Scheme For Leakage Power
Reduction In Nanoscale CMOS Circuit
ABSTRACT
This paper presents techniques to determine the optimal reverse
body bias (RBB) voltage to minimize leakage currents in modern
nanoscale CMOS technology. The proposed self-adaptive RBB
system finds the optimum reverse body bias voltage for minimal
leakage power adaptively by comparing subthreshold leakage
current (ISUBTH), gate tunneling leakage (IGATE), and band-to-band
tunneling leakage currents (IBTBT) in standby mode. The proposed
circuit has been designed and tested using 65nm bulk CMOS
technology at 25ºC under a supply voltage of less than 1V. The
optimal RBB was achieved at -0.372V with 1.2% error in the test
case of the paper, and the simulation result shows that it is
possible to reduce the total leakage current significantly as much
as 86% of the total leakage using the proposed circuit techniques.
Categories and Subject Descriptors
B.7.1 [types and design styles] advanced technologies
General Terms
Design, Performance
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