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Electronic Transport Characteristics of Gallium Nitride Nanowire-based Nanocircuits
 

Summary: Electronic Transport Characteristics of Gallium
Nitride Nanowire-based Nanocircuits
V.M. Ayres, B.W. Jacobs, Q. Chen, L. Udpa, Y. Fan, N. Tram, A. Baczewski, S. Kumar and M. Crimp
College of Engineering
Michigan State University
East Lansing, MI 48824, USA
J. Halpern and M. He
Department of Chemistry
Howard University
Washington, D.C. 20059, USA
M.A. Tupta
Keithley Instruments, Inc.
Cleveland, OH 44139, USA
R. Stallcup and A. Hartman
Zyvex Corporation
Richardson, Texas 75081, USA
Abstract--Electronic transport studies of a two-phase gallium
nitride nanowire are explored. Current-voltage measurements
are taken of gallium nitride based three terminal field effect
transistors fabricated via electron beam lithography. The

  

Source: Ayres, Virginia - Department of Electrical and Computer Engineering, Michigan State University

 

Collections: Materials Science; Biology and Medicine