Summary: Thin Solid Films 409 (2002) 8897
0040-6090/02/$ - see front matter 2002 Elsevier Science B.V. All rights reserved.
Investigation of an upflow cold-wall CVD reactor by gas phase Raman
Chinho Park *, Jang Yeon Hwang , Min Huang , Timothy J. Andersona, b b b
School of Chemical Engineering and Technology, 214-1 Tae-dong, Kyongsan 712-749, South Koreaa
University of Florida, Department of Chemical Engineering, Gainesville, FL 32611, USAb
The gas phase dynamics of an inverted, stagnation point flow CVD reactor were studied by both experiment and modeling.
The axial centerline temperature profile in the reactor was measured by analysis of the rotational Raman spectra from the carrier
gas (N or H ) as a function of the inlet flow velocity and the reactor aspect ratio. It was found that a larger temperature gradient2 2
normal to the susceptor surface was obtained with higher gas flow velocity, larger aspect ratio, and the use of a N carrier gas.2
A two-dimensional axisymmetric model with detailed heat transfer descriptions predicted the experimental data well. The validated
model clearly demonstrates that recirculation flows are less likely in inverted reactor geometry. 2002 Elsevier Science B.V. All
Keywords: Chemical vapor deposition; Gas phase Raman spectroscopy; Stagnation point flow reactor; Two-dimensional axisymmetric model
Cold-wall chemical vapor deposition (CVD) reactors
are often used to deposit thin films. In particular,