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Cubic AlGaN/GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-off

Summary: Cubic AlGaN/GaN Hetero-Junction Field-Effect
Transistors with Normally-on and Normally-off
E. Tschumak
University of Paderborn, Faculty of Science, Department of Physics, Warburger Straße 100
D-33098 Paderborn, Germany
Abstract. The growth of cubic group III-nitrides is a direct way to eliminate polarization effects, which inherently limit
the fabrication of normally-off hetero-junction field-effect transistors (HFETs) in GaN technology. HFET structures were
fabricated of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular beam epitaxy on free
standing 3C-SiC (001). The electrical insulation of 3C-SiC was realized by Ar+
implantation before c-AlGaN/GaN
growth. HFETs with normally-off and normally-on characteristics were fabricated of cubic AlGaN/GaN. Capacitance-
voltage characteristics of the gate contact were performed to detect the electron channel at the c-AlGaN/GaN hetero-
Keywords: non-polar cubic GaN, AlGaN, HFET, field effect.
PACS: 81.15.Hi, 72.20.-i, 73.50.-h, 85.30.TV
AlGaN/GaN hetero-junction field-effect transistors (HFETs) are presently of major interest for use in electronic
devices, in particular for high-power and high-frequency amplifiers. This is motivated by their potential in
commercial and military applications, e. g. in communication systems, radar, wireless stations, high-temperature


Source: As, Donat Josef - Department Physik, Universität Paderborn


Collections: Materials Science; Physics