Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
Insulating substrates for cubic GaN-based HFETs E. Tschumak , M.P.F. de Godoy, D.J. As, K. Lischka
 

Summary: Insulating substrates for cubic GaN-based HFETs
E. Tschumak √, M.P.F. de Godoy, D.J. As, K. Lischka
Department Physik, University of Paderborn, Warburger Strasse 100, 33098 Paderborn, Germany
a r t i c l e i n f o
Available online 24 September 2008
Keywords:
GaN
3C-SiC
a b s t r a c t
The growth of cubic group III-nitrides is a direct way to eliminate polarization effects, which inherently
limits the fabrication of normally off heterojunction field-effect transistors (HFETs) in the
GaN technology. However, for the achievement of electronic devices with cubic nitrides an important
precondition is the availability of a high-resistive substrate or GaN buffer layer with zinc-blende crystal
structure. We investigated the applicability of carbonized high resistance Si (0 01)-substrates and thick
conductive free-standing 3C-SiC (10 0) substrates with an Ar+
-ion-damaged surface layer for this
purpose and studied the use of carbon-doped GaN buffer layers for electrical insulation. We found that
Ar-implantation of 3C-SiC is an appropriate alternative to fabricate insulation layer for cubic GaN
(c-GaN) growth and that C-doped GaN buffers introduce non-linear I≠V characteristics. The structural
properties of c-GaN on Ar-implanted 3C-SiC are comparable to GaN on untreated 3C-SiC whereas on

  

Source: As, Donat Josef - Department Physik, Universitšt Paderborn

 

Collections: Materials Science; Physics