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SOS Gate Capacitance Modeling H. C. Morris*
 

Summary: SOS Gate Capacitance Modeling
H. C. Morris*
, E. C. Cumberbatch**
and H. Abebe***
*
San Jose State University, San Jose, CA, USA, hedleymorris@yahoo.com
**
Claremont Graduate University, Claremont, CA, USA, ellis.cumberbatch@cgu.edu
***
MOSIS Service, USC Information Sciences Institute, Marina del Rey, CA, USA, abebeh@mosis.org
ABSTRACT
A model for the gate capacitance model for the SOS
structure is presented. Exact analytic formula and numerical
simulations are presented. Both the forward and inverse
problems are solved and compared with experimental data.
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1 INTRODUCTION
Figure 1: A schematic of a poly SOS device
1.1 Basic Equations

  

Source: Abebe, Henok - Department of Physics and Astronomy, California State University, Los Angeles

 

Collections: Physics