Summary: SOS Gate Capacitance Modeling
H. C. Morris*
, E. C. Cumberbatch**
and H. Abebe***
San Jose State University, San Jose, CA, USA, firstname.lastname@example.org
Claremont Graduate University, Claremont, CA, USA, email@example.com
MOSIS Service, USC Information Sciences Institute, Marina del Rey, CA, USA, firstname.lastname@example.org
A model for the gate capacitance model for the SOS
structure is presented. Exact analytic formula and numerical
simulations are presented. Both the forward and inverse
problems are solved and compared with experimental data.
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Figure 1: A schematic of a poly SOS device
1.1 Basic Equations