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Summary: Three-dimensional morphology evolution of SiO2 patterned films
under MeV ion irradiation
Kan Otani
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
Xi Chen
Department of Civil Engineering and Engineering Mechanics, Columbia University, New York,
New York 10027
John W. Hutchinson, John F. Chervinsky, and Michael J. Aziza
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
Received 7 December 2005; accepted 24 April 2006; published online 31 July 2006
We have measured the evolving three-dimensional 3D morphology of patterned SiO2 stripes on Si
substrates induced by 3 MeV O++
ion irradiation. We develop a 3D constitutive relation to describe
anisotropic deformation, densification, and flow. We use this constitutive relation in a finite element
model that simulates the experimental morphology evolution, and we find excellent agreement
between simulated and measured profiles. The model should be useful in predicting morphology
evolution in complex three-dimensional structures under MeV ion irradiation. © 2006 American
Institute of Physics. DOI: 10.1063/1.2215269
I. INTRODUCTION
Ion beams have developed into a broadly useful tool for
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