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Summary: Large room temperature Rabi-splitting in IIVI semiconductor
microcavity quantum structures
A. Pawlis*, A. Khartchenko, O. Husberg, D.J. As, K. Lischka, D. Schikora
Department of Physics, University of Paderborn, Warburger Straße 100, D-33098 Paderborn, Germany
Abstract
Due to their large oscillator strength, ZnSe microcavities with (Zn,Cd)Se quantum wells are particularly suited to investigate the photon
exciton coupling behaviour in semiconductors. We have observed a strong coupling between the excitonic and photonic mode in a ZnSe
microcavity with four (Zn,Cd)Se quantum wells and distributed Bragg-mirrors of ZnS and YF3. A very large Rabi-splitting V . 40 meV was
observed at T ¼ 300 K in reflection measurements as well as in photoluminescence investigations.
q 2003 Elsevier Science Ltd. All rights reserved.
Keywords: Rabi-splitting; Microcavity structure; Bragg-mirrors
1. Introduction
Semiconductor quantum wells as part of microcavities
allow to study the interconversion between excitons and
photons, which in the strong coupling regime is manifested
as a Rabi-splitting into two resonance features of the optical
spectrum.
The coupling between excitons and photons generate
quasi-particles known as polaritons. These particles have
some extraordinary properties which open the possibility to
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