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Influence of defects on nanotube transistor performance Neophytos Neophytoua
 

Summary: Influence of defects on nanotube transistor performance
Neophytos Neophytoua
and Diego Kienle
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907-1285
Eric Polizzi
ECE Department, University of Massachusetts, Amherst, Massachusetts 01003
M. P. Anantram
Center for Nanotechnology, NASA Ames Research Center, Mail Stop 229-1, Moffett Field,
California 94035-1000
Received 13 January 2006; accepted 28 April 2006; published online 12 June 2006
We study the effect of vacancies and charged impurities on the performance of carbon nanotube
transistors by self-consistently solving the three-dimensional Poisson and Schrödinger equations.
We find that a single vacancy or charged impurity can decrease the drive current by more than 25%
from the ballistic current. The threshold voltage shift in the case of charged impurities can be as
large as 40 mV. © 2006 American Institute of Physics. DOI: 10.1063/1.2211932
Carbon nanotube field effect transistors CNTFETs
have excellent device characteristics and are candidates for
future digital switches and rf transistors.1­5
Simple circuits
based on CNTFETs have already been demonstrated.6

  

Source: Anantram, M. P. - Department of Electrical Engineering, University of Washington at Seattle

 

Collections: Materials Science; Computer Technologies and Information Sciences