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Planar Hall effect in orthogonal submicrometer Co wires Y. S. Huang, C. C. Wang, A. O. Adeyeye,a
 

Summary: Planar Hall effect in orthogonal submicrometer Co wires
Y. S. Huang, C. C. Wang, A. O. Adeyeye,a
and D. Tripathy
Information Storage Materials Laboratory, Department of Electrical and Computer Engineering,
National University of Singapore, 4 Engineering Drive 3, Singapore 117576
Presented on 1 November 2005; published online 19 April 2006
We report on the planar Hall effect PHE at the junction of two orthogonal 200-nm-wide Co wires.
Both the experimental and simulated PHE curves reveal that the magnetization switching at the
junction is strongly associated with the reversal processes of the individual wire. As the orientation
of applied field is varied with respect to the easy axes of the wires, the switching field and the
direction of the spin rotation at the junction can be well controlled. 2006 American Institute of
Physics. DOI: 10.1063/1.2165131
In recent years, great efforts have been devoted to me-
soscopic magnetic structures due to their strong size effect,
which leads to very different magnetic properties compared
with bulk films.13
Among the various structures, submi-
crometer wires are one of the most interesting subjects, be-
cause their special geometry makes them an ideal candidate
for low-dimensional applications as well as fundamental

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science