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Summary: Prevention of In droplets formation by HCl addition during metal organic
vapor phase epitaxy of InN
Sang Won Kang, Hyun Jong Park, Yong Sun Won, Olga Kryliouk,a
Tim Anderson,
Dmitry Khokhlov,b
and Timur Burbaevc
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611
Received 25 January 2007; accepted 23 March 2007; published online 20 April 2007
The low decomposition temperature of InN and relatively high thermal stability of NH3 necessitate
the use of a high NH3/TMIn ratio to prevent In droplet formation on the surface. This work shows
that the addition of Cl in the form of HCl Cl/In molar ratio range of 0.31.4 to the growth chamber
allows the growth of high quality InN films without the formation of a second In phase at a very low
value of the N/In molar inlet ratio 2500 . Photoluminescence spectra in the temperature range of
144 to 4.5 K showed a broad spectral band with a cutoff energy close to the reported minimum of
the InN band gap energy 0.65 eV . © 2007 American Institute of Physics.
DOI: 10.1063/1.2730582
Until recently, interest in indium nitride InN was
mainly derived from its role as a dilute component for en-
hancing emission efficiency of GaxIn1-xN and AlxIn1-xN ac-
tive layers in optoelectronic devices.15
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