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Comparative study of HfNx and HfGeN copper diffusion barriers on Ge S. Rawal, E. Lambers, and D. P. Nortona
 

Summary: Comparative study of HfNx and HfGeN copper diffusion barriers on Ge
S. Rawal, E. Lambers, and D. P. Nortona
Department of Materials Science and Engineering, University of Florida, P.O. Box 116400,
Gainesville, Florida 32611
T. J. Anderson
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611
L. McElwee-White
Department of Chemistry, University of Florida, Gainesville, Florida 32611
Received 25 February 2006; accepted 29 June 2006; published online 28 September 2006
The diffusion barrier properties of HfNx and HfGeN thin films for Cu metallization on Ge are
examined. The diffusion barrier films were deposited by reactive sputtering on p-Ge 001 single
crystal substrates with varying thicknesses. Cu thin films were then deposited in situ on the diffusion
barrier. The multilayer film structure was subsequently annealed in an Ar atmosphere. X-ray
diffraction was used to determine the film crystallinity and identify intermetallic phases due to
reactions involving the film and substrate. The HfNx and HfGeN diffusion barrier films remained
amorphous for annealing temperatures up to 700 C. At thickness of 50 nm, the HfNx films showed
superior diffusion barrier properties as compared to HfGeN based on the appearance of secondary
phases due to reactions and changes in the Cu morphology. These results suggest that HfNx is an
effective barrier material for Cu integration on Ge. 2006 American Institute of Physics.
DOI: 10.1063/1.2349470

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science