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VOLUME 82, NUMBER 11 P H Y S I C A L R E V I E W L E T T E R S 15 MARCH 1999 Spontaneous Pattern Formation on Ion Bombarded Si(001)
 

Summary: VOLUME 82, NUMBER 11 P H Y S I C A L R E V I E W L E T T E R S 15 MARCH 1999
Spontaneous Pattern Formation on Ion Bombarded Si(001)
Jonah Erlebacher and Michael J. Aziz
Harvard University, Division of Engineering and Applied Sciences, Cambridge, Massachusetts 02138
Eric Chason, Michael B. Sinclair, and Jerrold A. Floro
Sandia National Laboratories, Albuquerque, New Mexico 87185
(Received 2 November 1998)
Spectroscopic light scattering was used to monitor periodic ripple evolution on Si(001) in situ during
Ar1
sputtering. Analysis indicates that under high flux the concentration of mobile species on the
surface is temperature and ion flux independent. This is due to an effect of ion collision cascades
on the concentration of mobile species. We thereby measure the migration energy on the surface
to be 1.2 6 0.1 eV. The technique is generalizable to any material, including high temperature and
insulating materials for which surface migration energies are notoriously difficult to measure. [S0031-
9007(99)08687-1]
PACS numbers: 68.35.Bs, 81.10.Aj, 85.40.Ux
Low-energy (5001000 eV) ion bombardment is a
common technique used in many thin film applications
such as forming shallow junctions, sputter etching and
deposition, ion beam assisted growth, reactive ion etch-

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science