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Summary: International Journal of High Speed Electronics and Systems World Scientific
Vol. 14, No. 3 (2004) 831-836 www.worldscientific.com
© World Scientific Publishing Company
ANALYSIS OF GaN HBT STRUCTURES FOR HIGH POWER, HIGH
EFFICIENCY MICROWAVE AMPLIFIERS
D.M. KEOGH, J.C. LI, A.M. CONWAY, D. QIAO,
S. RAYCHAUDHURI, and P.M. ASBECK
University ofCalifornia at San Diego, La Jolla, CA 92037-0407, USA
R.D. DUPUIS
Georgia Institute ofTechnology, Atlanta, GA 30332, USA
M. FENG
University ofIllinois at Urbana-Champaign, Urbana, Illinois 61801, USA
GaN has become increasingly important for microwave applications up to K, band as a result of its
wide band-gap, which provides a high critical breakdown field and good thermal stability, yielding
excellent potential for high power and high voltage operation. It is of major interest to understand
the device structures that will lead to high efficiency, high power microwave amplifiers. In this
paper, we investigate by simulation the microwave performance of InGaN/GaN Heterojunction
Bipolar Transistors (HBTs), with proper device geometry to account for the effects of current
crowding. We provide an analysis of both emitter-up and collector-up InGaN/GaN HBT structures,
based on a distributed HBT model implemented in ADS. We simulate their performance in a fully
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