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In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction
 

Summary: In situ growth regime characterization of cubic GaN using reflection high
energy electron diffraction
J. Schörmann,a
S. Potthast, D. J. As, and K. Lischka
Department of Physics, University of Paderborn, Warburger Strasse 100, D-33095 Paderborn, Germany
Received 15 November 2006; accepted 14 December 2006; published online 26 January 2007
Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC 001
substrates. In situ reflection high energy electron diffraction was used to quantitatively determine the
Ga coverage of the GaN surface during growth. Using the intensity of the electron beam as a probe,
optimum growth conditions of c-GaN were found when a 1 ML Ga coverage is formed at the
surface. 1 m thick c-GaN layers had a minimum surface roughness of 2.5 nm when a Ga coverage
of 1 ML was established during growth. These samples revealed also a minimum full width at half
maximum of the 002 rocking curve. © 2007 American Institute of Physics.
DOI: 10.1063/1.2432293
Group III-nitrides crystallize in the stable wurtzite struc-
ture or in the metastable zinc blende structure. An important
difference between these material modifications is the pres-
ence of strong internal electric fields in hexagonal wurtzite
III-nitrides grown along the polar 0001 c axis, while these
"built-in" fields are absent in cubic zinc blende III-nitrides.

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics