| | |
Summary: IEEE BCTM 1.1
Current Status of GaN HeterojunctionBipolar Transistors
M. Feng', R. K. Price', R. Chan', T. Chun2, R. D. Dupuis', D.M. Keogh3,J.C. Li3,A.M. Conway', D.
Qiao', S. Raychaudhuri3and P. .M.Asbeck3
'UniversiryofIllinois at Urbanechampaign. Urbana,Illinois 61801
GeorgiaInstitute of Technology.Atlanto, GA 30332
Universiryof Cali&omiaat San Diego, LaJollo. CA 92037-0407
2
3
ABSTRACT: The paper reviews the current stateaf-the
art GaN HBT results, aud discusses advantagesof CaN HBTs
over GaN HFETs and other material systems for the high
power ampliner applications. Technical diflieulties
associated with GaN HBTs such as M O W material
growth, ICP dry etching, and ohmic contact issues are
discussed. Methods for the elimination of technical issues
and the authors recommended approaches for practical
realization of the GaN HBT-based rf high power amplifiers
will be described.
I. INTRODUCITON
|
