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Near infrared intersubband absorption in cubic GaN/AlN superlattices Eric A. DeCuir, Jr. 1
 

Summary: Near infrared intersubband absorption in cubic GaN/AlN superlattices
Eric A. DeCuir, Jr. 1
, Emil Fred1
, Omar Manasreh1
, Jorg Schormann2
, Donat J. As2
, and Klaus
Lischka2
1
Department of Electrical Engineering, University of Arkansas, 3217 Bell Engineering Center,
Fayetteville, AR, 72701
2
Department of Physics, University of Paderborn, Warburger Srasse 100, Paderborn, 33095,
Germany
ABSTRACT
Room temperature near-infrared intersubband transitions were observed in MBE grown
non-polar cubic GaN/AlN superlattice structures. The peak wavelengths of these transitions
were observed in the spectral region of 1.5­2.0 µm and were theoretically supported using a
transfer matrix approach. All samples were unintentionally doped and grown on 3C-SiC
substrates with a 100 nm GaN buffer. Each structure consisted of a 20 periods of GaN/AlN

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics