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Page 1 of 26 accepted for publication in Acta Materialia, October 2004.

Summary: Page 1 of 26
accepted for publication in Acta Materialia, October 2004.
Dislocation-Based Modeling of the Mechanical Behavior of
Epitaxial Metallic Multilayer Thin Films
Qizhen Li and Peter M. Anderson
Department of Materials Science and Engineering
The Ohio State University
2041 College Road, Columbus, OH 43210-1179
li.450@osu.edu, anderson.1@osu.edu
Abstract: A 3D Dislocation Cellular Automaton model is employed to simulate yield
and hardening in nanostructured metallic multilayer thin films during in-plane, biaxial
tensile loading. The films consist of 2 types of alternating, single-crystalline FCC layers
with (001) epitaxy, a mismatch in stress-free lattice parameter, but no elastic modulus
mismatch. The simulations monitor the operation of interfacial and threading sources
with lengths greater than the individual layer thickness. At larger layer thickness,
strength increases with decreasing layer thickness, due to slip confinement to individual
layers. At sufficiently small layer thickness, slip confinement is not possible, even during
initial stages of plastic deformation. Consequently, strength is not controlled by layer
thickness but rather by source length, as well as coherency stress and interfacial barrier
strength. Here, strength may increase, decrease, or reach a plateau depending on how


Source: Anderson, Peter M. - Department of Materials Science and Engineering, Ohio State University


Collections: Materials Science