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Condensed Matter Colloquium Thursday, March 10, 2011

Summary: Condensed Matter Colloquium
Thursday, March 10, 2011
2 pm, Room 1201
Refreshments at 1:30 pm in Room 1305F
Christoph Boehme
Department of Physics & Astronomy
University of Utah, Salt Lake City
Electric Readout and Storage Concepts for Electron and Nuclear
Spin States in Silicon
In semiconductors with sufficiently weak spin-orbit coupling (e.g. silicon), Pauli blockade
imposes spin-selection rules on electronic transitions which can be used as very sensitive
probes for electrical and optical electron and nuclear spin-readout [1]. We have explored
such spin measurement schemes with regard to their applicability for the readout of
electron donor spins and nuclear spins of phosphorous atoms in a crystalline silicon host
matrix [2, 3, 4, 5]. In this talk, two readout approaches will be discussed and compared:
(i) An electric readout using highly localized paramagnetic silicon surface states a probe
spins in the vicinity of the donor which allow for spin-dependent donor recombination
currents. (ii) Spin-dependent conduction electron trapping which controls conduction
electron mobility. Using coherent magnetic resonance for the controlled manipulation of
the spin states in silicon devices, we measured T1 and T2 times of the 31


Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park


Collections: Engineering; Materials Science