Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network

  Advanced Search  

PHYSICAL REVIEW B 84, 064523 (2011) Tunable terahertz emission from Bi2Sr2CaCu2O8+ mesa devices

Summary: PHYSICAL REVIEW B 84, 064523 (2011)
Tunable terahertz emission from Bi2Sr2CaCu2O8+ mesa devices
T. M. Benseman,*
A. E. Koshelev, K. E. Gray, W.-K. Kwok, and U. Welp
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, USA
K. Kadowaki and M. Tachiki
Institute for Materials Science, University of Tsukuba, Ibaraki 305-8753, Japan
T. Yamamoto
Semiconductor Analysis and Radiation Effects Group, Japan Atomic Energy Agency, 1233 Watanuki-machi,
Takasaki, Gunma 370-1292, Japan
(Received 24 June 2011; revised manuscript received 29 July 2011; published 24 August 2011)
We have measured coherent terahertz emission spectra from Bi2Sr2CaCu2O8+ mesa devices as a function of
temperature and mesa bias voltage. The emission frequency is found to be tunable by up to 12% by varying
the temperature and bias voltage. We attribute the appearance of tunability to asymmetric boundaries at the top
and bottom and the nonrectangular cross section of the mesas. This interpretation is consistent with numerical
simulations of the dynamics of intrinsic Josephson junctions in the mesa. Easily tunable emission frequency may
have important implications for the design of terahertz devices based on stacked intrinsic Josephson junctions.
DOI: 10.1103/PhysRevB.84.064523 PACS number(s): 74.81.Fa, 85.25.Cp, 74.72.Ek
Josephson junctions naturally convert a dc-voltage into


Source: Alexei, Koshelev - Materials Science Division, Argonne National Laboratory


Collections: Materials Science; Physics