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Single-pulse excimer laser nanostructuring of silicon: A heat transfer problem and surface morphology
 

Summary: Single-pulse excimer laser nanostructuring of silicon: A heat transfer
problem and surface morphology
Julia Eizenkop,1,a
Ivan Avrutsky,1
Daniel G. Georgiev,2
and Vipin Chaudchary3
1
Department of Electrical and Computer Engineering, Wayne State University, Detroit,
Michigan 48202, USA
2
Department of Electrical Engineering and Computer Science, University of Toledo, Toledo,
Ohio 43606-3390, USA
3
Department of Computer Science and Engineering, The State University of New York, Buffalo,
New York 14260, USA
Received 27 September 2007; accepted 25 February 2008; published online 6 May 2008
We present computer modeling along with experimental data on the formation of sharp conical tips
on silicon-based three-layer structures that consist of a single-crystal Si layer on a 1 m layer of
silica on a bulk Si substrate. The upper Si layers with thicknesses in the range of 0.8-4.1 m were
irradiated by single pulses from a KrF excimer laser focused onto a spot several micrometers in

  

Source: Avrutsky, Ivan - Department of Electrical and Computer Engineering, Wayne State University

 

Collections: Engineering