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Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors B. F. Chu-Kung,a
 

Summary: Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors
B. F. Chu-Kung,a
M. Feng, G. Walter, and N. Holonyak, Jr.
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign,
1406 W. Green St., Urbana, Illinois 61801
T. Chung, J.-H. Ryou, J. Limb, D. Yoo, S.-C. Shen, and R. D. Dupuis
Center for Compound Semiconductors, School of Electrical and Computer Engineering,
Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, Georgia 30332-0250
D. Keogh and P. M. Asbeck
Department of Electrical and Computer Engineering, University of California at San Diego,
9500 Gilman Drive, La Jolla, California 92093-0407
Received 24 February 2006; accepted 27 June 2006; published online 25 August 2006
The authors report radiative recombination from a graded-base InGaN/GaN heterojunction bipolar
transistor HBT grown by metal-organic chemical vapor deposition on sapphire. For a device with
a 40 40 m2
emitter area, a differential dc current gain of 15 is measured from the
common-emitter current-voltage characteristics, with the HBT breakdown voltage BVCEO 65 V.
The heterojunction bipolar light-emitting transistor exhibits a base-region recombination radiation
peak in the visible spectral range with a dominant peak at =385 nm blue emission . 2006
American Institute of Physics. DOI: 10.1063/1.2336619

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering