Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
ACOUSTIC RESONANCE IN AN INDEPENDENT-GATE FINFET Dana Weinstein1*
 

Summary: ACOUSTIC RESONANCE IN AN INDEPENDENT-GATE FINFET
Dana Weinstein1*
and Sunil A. Bhave2
1
Massachusetts Institute of Technology, Cambridge, Massachusetts, USA
2
Cornell University, Ithaca, New York, USA
ABSTRACT
This paper demonstrates the acoustic resonance of an
Independent-Gate (IG) FinFET driven with internal dielectric
transduction and sensed by piezoresistive modulation of the drain
current through the transistor. An acoustic resonance at 37.1 GHz
is obtained with a quality factor of 560, corresponding to an f.Q
product of 2.1x1013
. The demonstrated hybrid NEMS-CMOS
technology can provide RF CMOS circuit designers with high-Q
active devices operating up to mm-wave frequencies and beyond.
INTRODUCTION
As we scale to deep sub-micron (DSM) technology, transistor
unity gain frequencies increase, enabling the design of CMOS

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering