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INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS Int. J. Numer. Model. 2004; 17:4359 (DOI: 10.1002/jnm.523)
 

Summary: INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS
Int. J. Numer. Model. 2004; 17:43­59 (DOI: 10.1002/jnm.523)
Full hydrodynamic simulation of GaAs MESFETs
Andreas Aste1,n,y
, R.uudiger Vahldieck2
and Marcel Rohner3
1
Institute for Theoretical Physics, Klingelbergstrasse 82, 4054 Basel, Switzerland
2
Laboratory for Electromagnetic Fields and Microwave Electronics, Gloriastrasse 35, 8092 Z.uurich, Switzerland
3
Electronics Laboratory, Swiss Federal Institute of Technology, 8092 Z.uurich, Switzerland
SUMMARY
A finite difference upwind discretization scheme in two dimensions is presented in detail for the transient
simulation of the highly coupled non-linear partial differential equations of the full hydrodynamic model,
providing thereby a practical engineering tool for improved charge carrier transport simulations at high
electric fields and frequencies. The discretization scheme preserves the conservation and transportive
properties of the equations. The hydrodynamic model is able to describe inertia effects which play an
increasing role in different fields of micro- and optoelectronics, where simplified charge transport models
like the drift­diffusion model and the energy balance model are no longer applicable. Results of extensive

  

Source: Aste, Andreas - Institut für Physik, Universität Basel

 

Collections: Physics