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Oblique Hanle effect in semiconductor spin transport devices Biqin Huang, and Ian Appelbaum

Summary: Oblique Hanle effect in semiconductor spin transport devices
Jing Li,a
Biqin Huang, and Ian Appelbaum
Electrical and Computer Engineering Department, University of Delaware, Newark, Delaware 19716, USA
Received 21 January 2008; accepted 19 March 2008; published online 10 April 2008
Spin precession and dephasing "Hanle effect" provide an unambiguous means to establish the
presence of spin transport in semiconductors. We compare theoretical modeling with experimental
data from drift-dominated silicon spin-transport devices, illustrating the nontrivial consequences of
employing oblique magnetic fields due to misalignment or intentional, fixed in-plane field
components to measure the effects of spin precession. Model results are also calculated for Hanle
measurements under conditions of diffusion-dominated transport, revealing an expected Hanle
peak-widening effect induced by the presence of fixed in-plane magnetic bias fields. 2008
American Institute of Physics. DOI: 10.1063/1.2907497
Spin transport in semiconductors has recently been the
subject of vigorous research because it opens possibilities for
creating devices and circuits making use of the spin degree
of freedom in addition to manipulation of the electron
There has been much presentation in the literature
of "spin-valve" measurements, where the relative orientation


Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park


Collections: Engineering; Materials Science