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Nuclear Instruments and Methods in Physics Research B32 (1988) 11-22 North-Holland. Amsterdam
 

Summary: Nuclear Instruments and Methods in Physics Research B32 (1988) 11-22
North-Holland. Amsterdam
11
Section I. Ceramics
ION IMPLANTATION AND ANNEALING OF CRYSTALLINE OXIDES
AND CERAMIC MATERIALS ++
C.W. WHITE, L.A. BOATNER, P.S. SKLAD, C.J. McHARGUE, J. RANKIN *, G.C. FARLOW * *
and M.J. AZIZ +
Oak Ridge Natronal Laboratory, Oak Ridge, TN 37831, USA
The response of several crystalline oxides or ceramic materials to ion implantation and subsequent thermal annealing is described.
For both SrTiO, and CaTiOs single crystals, the near-surface region can be turned amorphous by relatively low doses of heavy ions
(Pb, 10'5/cm2, 540 keV). During annealing, the amorphous region recrystallizes epitaxlally with the underlying substrate by simple
solid-phase epitaxy, and the crystallization kinetics have been determined for both of these materials. In Also,, the amorphous phase
of the pure material is produced by a stoichiometric implant at liquid nitrogen temperature. During annealing, the amorphous film
crystallizes in the (crystalline) y phase, followed by the transformation of the y to the a phase at a well-defined interface. The
kinetics characterizing the growth of a-Also, have been determined. Preliminary results are presented on the effect of impurities
(Fe) on the nature and kinetics of the crystallization of amorphous AlaOs.
1. Introduction
Ion implantation is being investigated extensively as
a method to alter the near-surface properties of a wide

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science