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Epitaxial growth and characterization of CuInSe2 crystallographic polytypes
 

Summary: Epitaxial growth and characterization of CuInSe2
crystallographic polytypes
B. J. Stanberya)
HelioVolt Corporation, 1101 S. Capital of Texas Highway, Suite 100F, Austin, Texas 78746
S. Kincal and S. Kim
Department of Chemical Engineering, University of Florida, P.O. Box 116005, Gainesville, Florida 32611
C. H. Chang
Department of Chemical Engineering, Oregon State University, Corvallis, Oregon 97330
S. P. Ahrenkiel
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401
G. Lippold
Institute for Surface Modification, D-04103 Leipzig, Germany
H. Neumann
Fritz-Siemon-Strasse 26/111, D-04347 Leipzig, Germany
T. J. Anderson and O. D. Crisalle
Department of Chemical Engineering, University of Florida, P.O. Box 116005, Gainesville, Florida 32611
Received 10 July 2001; accepted for publication 29 November 2001
Migration-enhanced epitaxy MEE has been successfully employed to grow epitaxial films of the
ternary compound CuInSe2 on 001 GaAs that exhibit distinct coexisting domains of both a
nonequilibrium crystallographic structure characterized by CuAu CA cation ordering, and the

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science