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08853010/$25.00 2010 IEEE 2035IEEE TransacTIons on UlTrasonIcs, FErroElEcTrIcs, and FrEqUEncy conTrol, vol. 57, no. 9, sEpTEmbEr 2010
 

Summary: 08853010/$25.00 2010 IEEE
2035IEEE TransacTIons on UlTrasonIcs, FErroElEcTrIcs, and FrEqUEncy conTrol, vol. 57, no. 9, sEpTEmbEr 2010
Abstract--This paper presents the Butterworth-van Dyke
model and quantitative comparison that explore the design
space of lead zirconate titanate-only (PZT) and PZT on 3-, 5-,
and 10-m single-crystal silicon (SCS) high-overtone width-
extensional mode (WEM) resonators with identical lateral di-
mensions for incorporation into radio frequency microelectro-
mechanical systems (RF MEMS) filters and oscillators. A novel
fabrication technique was developed to fabricate the resonators
with and without a silicon carrier layer using the same mask
set on the same wafer. The air-bridge metal routings were
implemented to carry electrical signals while avoiding large
capacitances from the bond-pads. We theoretically derived and
experimentally measured the correlation of motional imped-
ance (RX), quality factor (Q), and resonance frequency (f) with
the resonators' silicon layer thickness (tSi) up to frequencies of
operation above 1 GHz.
I. Introduction
The development of modern integrated wireless com-

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering