Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
IEEE MICROWAVE AND GUIDED WAVE LETTERS, VOL. 10, NO. 10, OCTOBER 2000 421 A 26.5 GHz Silicon MOSFET 2 : 1 Dynamic
 

Summary: IEEE MICROWAVE AND GUIDED WAVE LETTERS, VOL. 10, NO. 10, OCTOBER 2000 421
A 26.5 GHz Silicon MOSFET 2 : 1 Dynamic
Frequency Divider
Matt Wetzel, Student Member, IEEE, Leathen Shi, Member, IEEE, Keith A. Jenkins, Senior Member, IEEE,
Paul R. de la Houssaye, Senior Member, IEEE, Yuan Taur, Fellow, IEEE, Peter M. Asbeck, Fellow, IEEE, and
Isaac Lagnado, Life Member, IEEE
Abstract--A bulk silicon divide-by-two dynamic frequency di-
vider with maximum clock speed of 26.5 GHz has been achieved.
The dynamic divider operates from 6.5 GHz to 26.5 GHz. The de-
sign is based on n-channel MOSFET's with an effective gate length
of 0.1 m.
Index Terms--CMOS digital integrated circuits, frequency di-
vider, high-speed integrated circuits.
I. INTRODUCTION
WITH the recent explosion of the communications in-
dustry, the consumer market has an increasing need
for radio frequency (RF) circuits in high volume, with high
performance, and with low cost. In addition to being a key
component needed for a phase locked loop in many commu-
nication systems, high-speed frequency dividers are used as a

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering