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Model for Dopant and Impurity Segregation During Vapor Phase Growth Craig B. Arnold and Michael J. Aziz MRS Symp. Proc. 648,
 

Summary: Model for Dopant and Impurity Segregation During Vapor Phase Growth
Craig B. Arnold and Michael J. Aziz MRS Symp. Proc. 648,
Division of Engineering and Applied Sciences, in press (2001)
Harvard University, Cambridge MA 02138, USA
ABSTRACT
We propose a new kinetic model for surface segregation during vapor phase growth that
takes into account multiple mechanisms for segregation, including mechanisms for inter-layer
exchange and surface diffusion. The resulting behavior of the segregation length shows
temperature and velocity dependence, both of which have been observed in experiments. We
compare our analytic model to experimental measurements for segregation of Phosphorus in
Si(001), and we find an excellent agreement using realistic energies and pre-exponential factors
for kinetic rate constants.
INTRODUCTION
The growth of extremely sharp interfaces in materials has become increasingly important
in the devices we build. For example, the device quality for delta doping in semiconductors [1, 2]
or certain multi-layered metallic systems [3, 4] is sensitive to the redistribution of atomic species
on the monolayer scale. The main physical problem to overcome is the tendency for atoms of one
species or another to segregate to the free surface during film growth. Growth of such structures is
experimentally challenging, and although there are some exceptions [5], high quality crystal
growth with completely suppressed segregation is not generally possible. The physical, chemical,

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science