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Indium-Vanadium Oxides Deposited by Radio Frequency Sputtering: New Thin Film Transparent
 

Summary: Indium-Vanadium Oxides Deposited by Radio
Frequency Sputtering: New Thin Film Transparent
Materials for Li-Insertion Electrochemical Devices
F. Artuso,*,, F. Decker,, A. Krasilnikova, M. Liberatore, A. Lourenco,|
E. Masetti, A. Pennisi,, and F. Simone,
Chemistry Department, University of Roma "La Sapienza", I-00185 Roma, Italy,
ENEA-Casaccia, Thin Films Laboratory, Via Anguillarese, 00060 Roma, Italy, UNICAMP/
IFGW/DFA, CP 6165, CEP 13084-970, Campinas, SP, Brazil, Physics Department,
University of Catania, Corso Italia 57, 95129 Catania, Italy, and
Istituto Nazionale di Fisica della Materia, INFM
Received June 11, 2001. Revised Manuscript Received November 4, 2001
Thin films of mixed In/V oxides have been obtained by reactive RF sputtering. Their optical
and electrochemical performances have been investigated in order to determine their possible
applications in electrochromic devices as optically passive ion-storage layers. The targets
used have been made of In2O3 and V2O5 powders mixed in different In/V ratios in a reactive
sputtering atmosphere. Cyclic voltammetry and chronopotentiometry studies of these films
have been performed. The films demonstrate high ion-storage capacity retained even after
1000 cycles without any significant degradation. Lithium diffusion coefficients, calculated
by the potentiostatic intermittent titration technique (PITT), range around 10-13 cm2 s-1.
The optical measurements, taken in the UV-vis-NIR transmittance and reflectance modes,

  

Source: Artuso, Florinda - Department of Environment, Global Change and Sustainable Development, ENEA

 

Collections: Energy Storage, Conversion and Utilization