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Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base design
 

Summary: Device operation of InGaN heterojunction bipolar transistors
with a graded emitter-base design
T. Chung, J. Limb, D. Yoo,a
J.-H. Ryou, W. Lee, S.-C. Shen, and R. D. Dupuisa ,b
School of Electrical and Computer Engineering and Center for Compound Semiconductors,
Georgia Institute of Technology, Atlanta, Georgia 30332-0250
B. Chu-Kung and M. Feng
Micro and Nanotechnology Research Center, Department of Electrical and Computer Engineering,
University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
D. M. Keogh and P. M. Asbeck
Department of Electrical and Computer Engineering, University of California, San Diego,
La Jolla, California 92093-0407
Received 14 December 2005; accepted 24 March 2006; published online 1 May 2006
The device operation of InGaN heterojunction bipolar transistors with a graded InGaN emitter-base
design grown by metal organic chemical vapor deposition on sapphire substrates is demonstrated.
The Gummel plot, current gain, and common-emitter current-voltage characteristics of the device
are presented. The dc common-emitter current gain of a 25 25 m2
emitter size device increases
with collector current and the current gain reaches a high value of 13 at IC=10 mA with a base
width of 100 nm and a hole concentration of p=2 1018

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering