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phys. stat. sol. (c) 2, No. 7, 24462449 (2005) / DOI 10.1002/pssc.200461513 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
 

Summary: phys. stat. sol. (c) 2, No. 7, 24462449 (2005) / DOI 10.1002/pssc.200461513
2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Epitaxial strain energy measurements of GaN on sapphire
by Raman spectroscopy
H. J. Park1
, C. Park2
, S. Yeo2
, S.W. Kang1
, M. Mastro1
, O. Kryliouk1
, and T. J. Anderson1*
1
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
2
School of Chemical Engineering and Technology, Yeungnam University, Gyeongsan 712-749, Korea
Received 13 July 2004, revised 12 August 2004, accepted 27 January 2005
Published online 17 March 2005
PACS 61.72.Hh, 68.35.Gy, 68.60.Dv, 78.30.Fs, 81.05.Ea, 81.70.Fy
This study reports a non-destructive method of measuring the residual strain in the GaN epilayer grown
on sapphire substrate by micro-Raman spectroscopy. Operating in confocal mode this method allows a

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science