Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
Room-temperature photoresponse of Schottky photodiodes based on GaNxAs1-x synthesized by ion implantation and pulsed-laser melting
 

Summary: Room-temperature photoresponse of Schottky photodiodes based on
GaNxAs1-x synthesized by ion implantation and pulsed-laser melting
Wei Yi,a
Taeseok Kim,b
Ilan Shalish, Marko Loncar, Michael J. Aziz, and
Venkatesh Narayanamurti
School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
Received 31 August 2010; accepted 22 September 2010; published online 11 October 2010
The spectral responsivity for Schottky photodiodes based on the GaNxAs1-x alloys synthesized using
nitrogen N ion implantation followed by pulsed-laser melting and rapid thermal annealing is
presented. An N-induced redshift up to 250 meV 180 nm in the photocurrent onset energy
wavelength is observed. The N concentration dependence agrees with the values measured by
photomodulated reflectance and ballistic electron emission microscopy, and with the calculation by
the band anticrossing model for the splitting of the conduction band in GaNxAs1-x. 2010
American Institute of Physics. doi:10.1063/1.3500981
Highly mismatched semiconductor alloys HMAs , com-
pound semiconductors in which a small fraction of the an-
ions is replaced by more electronegative elements, have be-
come important due to their dramatic changes in electronic
properties from the host materials and motivated many po-

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University
Loncar, Marko - Division of Engineering and Applied Sciences, Harvard University
Narayanamurti, Venky - School of Engineering and Applied Sciences, Harvard University

 

Collections: Engineering; Materials Science; Physics