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Summary: ABSTRACT
The MOSFET (metal-oxide-silicon field-effect transistor) substrate
current has been expected to increase dramatically due to the
transistor size shrinkage in a deep-submicron process (transistor
channel length below or equal to 0.25 mµ ). This is a major
concern for the accuracy of the existing models in predicting the
transistor channel current and degradation of the device life-time,
[1]. The main source for this substrate current increase is the hot-
carrier effect, impact ionization. Most of the existing impact
ionization rate models are accurate; however they require
numerical analysis to determine the final solutions, [2-4]. The
numerical methods applications in semiconductor device modeling
are mostly limited at the device simulation level. For circuit
analysis application, analytical solutions are preferred because of
their simplicity and computational speed. In [5, 6], the Gauss-
Laguerre integration method is shown to be effective in
determining an accurate compact analytical model for the impact
ionization rate. In this paper we apply same method, Gauss-
Laguerre, on the substrate current model equation of [7], and the
accuracy of our final analytical model is determined by comparing
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