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Significant Enhancement of Hole Mobility in [110] Silicon Nanowires
 

Summary: Significant Enhancement of Hole
Mobility in [110] Silicon Nanowires
Compared to Electrons and Bulk Silicon
A. K. Buin,*, A. Verma, A. Svizhenko, and M. P. Anantram
Nanotechnology Program, UniVersity of Waterloo, 200 UniVersity AVenue West,
Ontario N2T 1P8, Canada, Department of Electrical Engineering, Texas A&M
UniVersity-KingsVille, Texas 78363, and SilVaco Data Systems Inc.,
4701 Patrick Henry DriVe, Santa Clara, California 95054
Received October 22, 2007; Revised Manuscript Received December 19, 2007
ABSTRACT
Utilizing sp3d5s* tight-binding band structure and wave functions for electrons and holes we show that acoustic phonon limited hole mobility
in [110] grown silicon nanowires (SiNWs) is greater than electron mobility. The room temperature acoustically limited hole mobility for the
SiNWs considered can be as high as 2500 cm2/V s, which is nearly three times larger than the bulk acoustically limited silicon hole mobility.
It is also shown that the electron and hole mobility for [110] grown SiNWs exceed those of similar diameter [100] SiNWs, with nearly 2 orders
of magnitude difference for hole mobility. Since small diameter SiNWs have been seen to grow primarily along the [110] direction, results
strongly suggest that these SiNWs may be useful in future electronics. Our results are also relevant to recent experiments measuring SiNW
mobility.
With the semiconductor industry fabricating devices with
feature sizes in the tens of nanometers, there is a potential
for silicon nanowire (SiNW) devices to play an important

  

Source: Anantram, M. P. - Department of Electrical Engineering, University of Washington at Seattle

 

Collections: Materials Science; Computer Technologies and Information Sciences