Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
GaNWW-oxide metal base transistor with very large current gain and power gain
 

Summary: GaNWW-oxide metal base transistor with very large current gain
and power gain
K. Mochizuki,a)
K. Uesugi,b)
and P. M. Asbeck
Department of Electrical and Computer Engineering, University of California, San Diego,
9500 Gilman Drive, La Jolla, California 92093-0407
J. Gotohc)
and T. Mishima
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
K. Hirata and H. Oda
Hitachi ULSI Systems Corp., Kokubunji, Tokyo 185-8601, Japan
Received 10 April 2000; accepted for publication 7 June 2000
We demonstrate a GaN/W/W-oxide metal base transistor MBT whose collector is formed by
oxidizing the intrinsic W base. The thickness of the nonoxidized intrinsic base of the fabricated
collector-up MBT on a sapphire substrate was estimated to be 23 nm. Although the MBT showed
large leakage, subtraction of the leakage from collector current revealed that the transistor had a
very large small-signal direct current dc current gain of 87 dB and a dc power gain of 50 dB. This
indicates that the GaN-based MBT is a possible candidate for microwave and millimeterwave
amplifiers as well as for high-speed integrated circuits used in optical fiber communication system.

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering