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350 IEEE MICROWAVE AND GUIDED WAVE LETTERS, VOL. 7, NO. 10, OCTOBER 1997 A 2.4-GHz Silicon-on-Sapphire
 

Summary: 350 IEEE MICROWAVE AND GUIDED WAVE LETTERS, VOL. 7, NO. 10, OCTOBER 1997
A 2.4-GHz Silicon-on-Sapphire
CMOS Low-Noise Amplifier
R. A. Johnson, Student Member, IEEE, C. E. Chang, Member, IEEE, P. R. de la Houssaye, Member, IEEE,
M. E. Wood, G. A. Garcia, Member, IEEE, P. M. Asbeck, Member, IEEE, and I. Lagnado, Member, IEEE
Abstract--A low-noise amplifier operating at 2.4 GHz has been
fabricated with MOSFET's in silicon-on-sapphire technology.
The amplifier has a 2.8-dB noise figure, 10-dB gain, and 14-dBm
output referred IP3 with 14-mW power dissipation. The amplifier
was matched for minimum noise with on-chip spiral inductors
and capacitors.
Index Terms--Microwave FET amplifiers, noise, MMIC's.
I. INTRODUCTION
IMPROVEMENTS in silicon device performance combined
with low cost are making silicon an increasingly attractive
technology for microwave wireless communication circuits.
One such application is in monolithic transceivers operating
in the 1.92.4-GHz regime. A key circuit needed for this
application is a low-noise amplifier (LNA). There has been
much work to date on LNA's, including CMOS LNA's. In

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering