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Band offset between cubic GaN and AlN from intra-and interband spectroscopy of superlattices

Summary: Band offset between cubic GaN and AlN from intra- and
interband spectroscopy of superlattices
C. Mietze1
, E.A. DeCuir, Jr.², M.O. Manasreh², K. Lischka1
and D.J. As1
University of Paderborn, Faculty of Science, Department of Physics, Warburger Strasse 100 D-33098 Paderborn,
Department of Electrical Engineering, University of Arkansas, 3217 Bell Engineering Center, Fayetteville,
Arkansas 72701, USA
Abstract. By the analysis of intra- and intersubband transitions in GaN/AlN superlattices the band offset is determined
experimentally. Superlattice structures with different period lengths were fabricated by plasma-assisted molecular beam
epitaxy 3C-SiC substrates. The structural properties were studied by high resolution X-ray diffraction, revealing a high
structural perfection of the superlattice region with several peaks in the X-ray spectra. Infrared absorbance spectroscopy
revealed clear intrasubband transitions in the spectral region of 1.55 µm measured at room temperature. Clear
intersubband transitions were observed by photoluminescence at room temperature. These transition energies were
compared to calculated energies using a 1D Poisson Schrödinger solver. For the calculations standard parameters for
cubic GaN and AlN were used, while the band offset between GaN and AlN was varied. Optimal agreement between
experimental and theoretical data was obtained for a band offset EC: EV of 55:45.


Source: As, Donat Josef - Department Physik, Universität Paderborn


Collections: Materials Science; Physics