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Effects of interfacial charges on semiconductor films A. M. Alencar, R. N. Costa Filho, V. N. Freire, and G. A. Farias
 

Summary: Effects of interfacial charges on semiconductor films
A. M. Alencar, R. N. Costa Filho, V. N. Freire, and G. A. Farias
Departamento de Fi´sica, Universidade Federal do Ceara´, Campus do Pici, Centro de Cie^ncias Exatas, Caixa Postal 6030,
60455-760 Fortaleza, Ceara´, Brazil
Received 18 November 1997
The electron-phonon coupling and the confined electron binding energy in a semiconductor film with a
charge density at both surfaces is investigated. Maxwell equations are solved with appropriate boundary
conditions to calculate the dispersion relation of bulk longitudinal-optical LO and surface-optical SO
phonons. The Hamiltonian that describes the electron-phonon interaction is obtained through a quantum treat-
ment, and a perturbation theory up to the second order is used to calculate the ground-state energy of confined
polarons. Numerical results are obtained for the dispersion relation, the electron-phonon coupling function, and
the ground-state energy of polarons in GaAs films. It is shown that the charged interfaces do not change the
volume modes of a GaAs film, but alter significantly its surface modes. The dispersion relation of SO phonons,
the electron-phonon coupling function, and the ground-state energy of the polaron depend on the surface
charge density, as well as on the film thickness. S0163-1829 98 03219-6
I. INTRODUCTION
The interaction between electrons and elementary excita-
tions in the neighborhood of a surface is a matter of rel-
evance to the development of technological applications.
There has been great interest in the investigation of the prop-

  

Source: Alencar, Adriano Mesquita - Departamento de Física Geral, Universidade de São Paulo

 

Collections: Physics