Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
HIGH-Q, LOW IMPEDANCE POLYSILICON RESONATORS WITH 10 NM AIR GAPS
 

Summary: HIGH-Q, LOW IMPEDANCE POLYSILICON RESONATORS
WITH 10 NM AIR GAPS
Tiffany J. Cheng and Sunil A. Bhave
Cornell University, Ithaca, NY, USA
ABSTRACT
This paper presents a fabrication process to
manufacture air-gap capacitively-transduced RF
MEMS resonators. 2-port measurements show
motional impedance ( ) < 1.3k and quality factor
(Q) > 65,000 at 223MHz in vacuum. The fabrication
process involves depositing a dual-layer spacer of
10nm of SiO2 and 90nm of hafnia via atomic layer
deposition (ALD) followed by oxide release.
Nanometer air gaps are achieved, while the hafnia
provides reliability against shorting of resonator and
electrode. Consistent performance was achieved
across multiple devices, demonstrating the robustness
of the process.
INTRODUCTION
With exceptionally high quality factors, low

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering