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IEEETRANSACTIONS ON ELECTRONDEVICES, VOL. ED-27, NO. 5 , MAY 1980 939 Analytical Solutions for the Breakdown Voltages of
 

Summary: IEEETRANSACTIONS ON ELECTRONDEVICES, VOL. ED-27, NO. 5 , MAY 1980 939
Analytical Solutions for the Breakdown Voltages of
Punched-Through DiodesHavingCurved
Junction Boundaries at the Edges
Absrract-Analytical expressions are derived for the breakdown volt-
ages of punched-throughdiodes having aplanestructureterminated
with cylindrical and spherical curved boundaries at the edges, through
the use of suitable approximations for the electricfield in the depletion
layer. Theexpressions derived includeboth p+-i-n+and p+-p-n+ (or
p+-n-n+) types and are given in terms of the middle-region (i-layer or
player) width, the radius of curvature of the junctionedge, the punch-
through voltage, andtheplane parallel breakdown voltage of p+-i-n+
diodes.
The results obtained include a correlation between the middle-region
(player)widthandthewidth of thedepletionlayerinthe curved
portions of the junction when the applied reverse bias across the diode
is just sufficient so that punchthrough takes in the portions where the
junction is plane parallel. These results are made use of in the break-
down voltage calculations.
I. INTRODUCTION

  

Source: Anantharam, Venkat - Department of Electrical Engineering and Computer Sciences, University of California at Berkeley

 

Collections: Engineering