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Emission of terahertz radiation from SiC Jared H. Strait,a
 

Summary: Emission of terahertz radiation from SiC
Jared H. Strait,a
Paul A. George, Jahan Dawlaty, Shriram Shivaraman,
Mvs Chandrashekhar, Farhan Rana, and Michael G. Spencer
School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
Received 12 May 2009; accepted 11 July 2009; published online 5 August 2009
We report the emission of strong coherent broadband terahertz radiation from 6H-silicon-carbide
SiC excited with optical pulses. The measured terahertz spectral signal-to-noise ratio is better than
one thousand. We determine that the terahertz radiation is generated via second order optical
nonlinearity optical rectification . We present a measurement of the ratio of nonlinear susceptibility
tensor elements zzz
2
/ zxx
2
and the complex index of refraction of silicon carbide at terahertz
frequencies. 2009 American Institute of Physics. DOI: 10.1063/1.3194152
Silicon carbide SiC is a wide bandgap semiconductor
possessing high mechanical stability, chemical stability, and
thermal conductivity. As a result, it is a promising candidate
for high-field and high-power electronics.1,2

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering