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Second-order susceptibility from a tight-binding Hamiltonian T. Dumitrica, J. S. Graves, and R. E. Allen
 

Summary: Second-order susceptibility from a tight-binding Hamiltonian
T. Dumitrica, J. S. Graves, and R. E. Allen
Department of Physics, Texas A&M University, College Station, Texas 77843
Received 15 June 1998
Using a new formalism that modifies a tight-binding Hamiltonian to include interaction with a time-
dependent electromagnetic field, we have obtained an analytical expression for the second-order susceptibility.
This expression has been used to calculate the energy dependence of (2)
( ) for GaAs. The results are in
agreement with previous calculations and with available experimental data. S0163-1829 98 01848-7
I. INTRODUCTION
Nonlinear optical phenomena in semiconductors are of
considerable interest for both applications and understanding
of the fundamental physics. For this reason there have been
several previous theoretical studies of the second-order non-
linear susceptibility (2)
( ).13
An additional motivation in-
volves experiments in which semiconductors are subjected to
intense subpicosecond laser pulses.46
Measurements of sec-

  

Source: Allen, Roland E. - Department of Physics and Astronomy, Texas A&M University

 

Collections: Physics